Effect of asymmetric Schottky barrier on GaN-based metal-semiconductor-metal ultraviolet detector
Effect of asymmetric Schottky barrier on GaN-based metal-semiconductor-metal ultraviolet detector
复制标题
非对称肖特基势垒对GaN基金属-半导体-金属紫外探测器的影响
DOI：
10.1063/1.3672030
复制
发表时间：
2011-12-26
影响因子：
4
通讯作者：
Shen, Bo
中科院分区：
文献类型：
--
作者：
Li, Dabing;Sun, Xiaojuan;Shen, Bo
设计了一种Ni/GaN/Au结构的非对称肖特基势垒金属-半导体-金属(MSM)紫外探测器，研究了非对称肖特基势垒对探测器响应的影响。当对Ni/GaN接触施加正偏压时，该探测器在0V偏压下有响应，并且提高了响应度；但是，当施加负偏压时，内部增益消失。这与对称的Ni/GaN/Ni肖特基势垒MSM紫外探测器形成了鲜明的对比，在正/负偏压下没有内部增益，在0V偏压下几乎没有响应。非对称肖特基势垒探测器性能的改善是因为Au的功函数较低，导致肖特基势垒减小，从而增强了空穴积累和陷阱过程，从而导致了内部增益。
An asymmetric Schottky barrier metal-semiconductor-metal (MSM) ultraviolet (UV) detector with Ni/GaN/Au structure was designed and the effect of the asymmetric Schottky barrier on the detector response was investigated. This detector had response at 0 V bias and increased responsivity when a positive bias was applied to the Ni/GaN contact; however, the internal gain disappeared when a negative bias was applied to this point. This contrasts with a symmetric Ni/GaN/Ni Schottky barrier MSM UV detector which had no internal gain under positive/negative bias and almost no response at 0 V bias. The improved performance of the asymmetric Schottky barrier detector was because of the lower work function of Au causing reduction of Schottky barrier and hence enhancing a hole-accumulating and trapping process, which resulted in internal gain.