P‐18: Improvement of Stability in ZnO TFT Under Bias Stress
P‐18: Improvement of Stability in ZnO TFT Under Bias Stress
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P-18：偏置应力下 ZnO TFT 稳定性的提高
DOI：
10.1889/1.2785273
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发表时间：
2007
期刊：
影响因子：
--
通讯作者：
H. Chu
中科院分区：
文献类型：
--
作者：
Chi;Sang Hee Ko Park;Jeong;S. Chung;Yong;L. Do;H. Chu
研究了ZnO TFT在偏压应力下的稳定性。在100 °C下通过原子层沉积（ALD）和等离子体增强原子层沉积（PEALD）沉积的透明ZnO薄膜被用作有源沟道。PEALD生长ZnO层的TFT在偏置应力下的稳定性比ALD生长ZnO层的TFT更好。
The stability of ZnO TFT under bias stress was investigated. Transparent ZnO thin films deposited by means of atomic layer deposition(ALD) and plasma enhanced atomic layer deposition(PEALD) at 100 °C were used as the active channel. The TFT with PEALD grown ZnO layer has better stability under bias stress than the TFT with ALD grown ZnO layer.