Efficient Perovskite Solar Cells with a CuI-Modified Polymer Hole-Transport Layer
Efficient Perovskite Solar Cells with a CuI-Modified Polymer Hole-Transport Layer
复制标题
具有 CuI 改性聚合物空穴传输层的高效钙钛矿太阳能电池
DOI：
10.1021/acsaem.2c01681
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发表时间：
2022
影响因子：
6.4
通讯作者：
Yanbing Hou
中科院分区：
文献类型：
--
作者：
Fanwen Meng;Pengcheng Jia;Xiaomeng Li;Yang Tang;Bo Song;Junhan Guo;Liang Qin;Yufeng Hu;Feng Teng;Zhidong Lou;Yanbing Hou
Poly[bis(4-phenyl)(2，4，6-trimethylphenyl)amine]是倒置钙钛矿太阳能电池中最常用的聚合物空穴传输层之一。然而，由于在PTAA衬底上制备的钙钛矿薄膜的结晶质量较差，具有PTAA空穴传输层的太阳电池并没有表现出优异的光电性能。此外，PTAA作为一种聚合物半导体材料具有很强的疏水性，钙钛矿前驱体溶液在PTAA表面的润湿性不是很好，影响了钙钛矿膜的结晶质量。CuI不仅具有合适的能级结构和优良的电荷转移效率，而且具有与钙钛矿相同的元素碘，有利于形成良好的界面接触。本文采用CuI对PTAA薄膜进行改性，不仅改善了薄膜的润湿性，而且促进了薄膜的结晶。提出了一种由暂态开路电压衰减估计深缺陷密度的方法。利用这种方法，我们比较了CuI修饰的PTAA薄膜和PTAA薄膜上钙钛矿活性层的深能级陷阱密度。我们证明了CuI修饰PTAA可以同时抑制浅缺陷和深缺陷，从而有效地促进了载流子的输运。CuI修饰的器件的功率转换效率(PCE)达到20.20%，明显高于纯PTAA器件的18.07%。本研究表明，无机半导体材料CuI修饰聚合物空穴传输层是一种可以为PVSCs界面修饰工程提供指导的方法。
Poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) is one of the most used polymer hole-transport layers in inverted perovskite solar cells (PVSCs). However, due to the poor crystal quality of perovskite films prepared on the PTAA underlayer, the solar cells with the PTAA hole-transport layer have not shown excellent photoelectric performance. Furthermore, as a polymer semiconductor material, PTAA is highly hydrophobic, and the wettability of the perovskite precursor solution on the surface of PTAA is not very good, affecting the crystal quality of the perovskite film. CuI has not only a suitable energy-level structure and excellent charge transfer efficiency but also the same element iodine as perovskite, which is conducive to the formation of good interface contact. In this paper, a PTAA film is modified with CuI, which not only improves the wettability but also promotes the crystallization of the perovskite film. A method is developed to estimate the deep defect density from transient open-circuit voltage decay. Using this method, we compare the density of deep-level traps of the perovskite active layer on a CuI-modified PTAA film with that on a PTAA film. We demonstrate that CuI modification to PTAA can inhibit both shallow defects and deep defects, which facilitates carrier transport effectively. The power conversion efficiency (PCE) of the CuI-modified devices achieves 20.20%, which is significantly higher than the 18.07% of the PTAA-only devices. This study demonstrates that the inorganic semiconductor material CuI-modified polymer hole-transport layer is an approach that would provide guidance for interface modification engineering of PVSCs.