Second critical point in first order metal-insulator transitions.

Second critical point in first order metal-insulator transitions.
复制标题

一阶金属-绝缘体转变的第二个临界点。

DOI:
10.1103/physrevlett.101.226407
复制
发表时间:
2008
影响因子:
8.6
通讯作者:
B. R. Patton
B. R. Patton
中科院分区:
物理与天体物理1区
文献类型:
--
作者:
I. Kostadinov;B. R. Patton

文献摘要

参考文献

被引文献

相似文献

对于一阶金属-绝缘体跃迁,我们表明,在直流电导为零的同时,存在第二个临界点,在这个临界点上介电常数变为零并进一步变为负值。此时金属反射率急剧增加。在三维无序系统中,这两个点可以通过相分离状态分开,但在二维系统中可能倾向于合并。为了说明,我们用一个简单的有效介质近似来计算介电函数,并表明在第二点它变为负值。我们在典型的Mott绝缘子(如MnO)上重现了实验数据,清楚地证明了这两点的存在。我们讨论了其他实验的研究相分离状态和类似的相分离在超导体绝缘内含物。
For first order metal-insulator transitions we show that, together with the dc conductance zero, there is a second critical point where the dielectric constant becomes zero and further turns negative. At this point the metallic reflectivity sharply increases. The two points can be separated by a phase separation state in a 3D disordered system but may tend to merge in 2D. For illustration we evaluate the dielectric function in a simple effective medium approximation and show that at the second point it turns negative. We reproduce the experimental data on a typical Mott insulator such as MnO, demonstrating the presence of the two points clearly. We discuss other experiments for studies of the phase separation state and a similar phase separation in superconductors with insulating inclusions.
DOI: 10.1103/physrevlett.42.673
发表时间: 1979-01-01
影响因子: 8.6
作者:
ABRAHAMS, E;ANDERSON, PW;RAMAKRISHNAN, TV
通讯作者: RAMAKRISHNAN, TV