Heteroepitaxial Growth of Zinc Oxide Single Crystal Thin Films on (111) Plane YSZ by Pulsed Laser Deposition
Heteroepitaxial Growth of Zinc Oxide Single Crystal Thin Films on (111) Plane YSZ by Pulsed Laser Deposition
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脉冲激光沉积在(111)面YSZ上异质外延生长氧化锌单晶薄膜
DOI：
10.1557/proc-570-309
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发表时间：
1999
期刊：
影响因子：
--
通讯作者：
H. Kawazoe
中科院分区：
文献类型：
--
作者：
H. Ohta;H. Tanji;M. Orita;H. Hosono;H. Kawazoe
采用PLD方法，在超高真空室中使用KrF准分子激光（248nm）在氧化钇稳定氧化锆（YSZ）的（111）表面和蓝宝石（0001）表面上生长异质外延ZnO薄膜。在800℃的衬底温度下在YSZ（111）上生长的ZnO在ZnO[1120]//YSZ[110]的ZnO/YSZ界面处具有外延关系。观察到六边形颗粒，其表面是原子级平坦的。 ZnO晶粒尺寸增大，霍尔迁移率升至1400nm和75cm2/Vs。随着薄膜厚度从 10 nm 增加到 800 nm。
Heteroepitaxial ZnO films were grown on (111) surface of yttria stabilized zirconia (YSZ) and (0001) surface of sapphire by PLD method, using KrF eximer laser (248nm) in an ultra-high-vacuum chamber. ZnO grown on YSZ (111) at the substrate temperature of 800°C had an epitaxial relationship at the ZnO/YSZ interface of ZnO [1120]//YSZ [110]. Hexagonalshaped grains were observed whose surfaces were atomically flat. The grain size of ZnO increased and the Hall mobility rose toward 1400nm and 75cm2/Vs. respectively as film thickness increased from 10 nm to 800 nm.