DC modeling and characterization of AlGaAs/GaAs heterojunction bipolar transistors for high-temperature applications
DC modeling and characterization of AlGaAs/GaAs heterojunction bipolar transistors for high-temperature applications
复制标题
DOI：
10.1109/4.272113
复制
发表时间：
1994-02
期刊：
影响因子：
--
通讯作者：
C. T. Dikmen;N. Dogan;M. Osman
中科院分区：
文献类型：
--
作者：
C. T. Dikmen;N. Dogan;M. Osman
报告了 AlGaAs/GaAs 异质结双极晶体管 (HBT) 在高温 (27/spl deg/-300/spl deg/C) 下的大信号直流特性。开发了高温 SPICE 模型，其中包括复合生成电流分量和雪崩倍增，这在高温下变得极其重要。还包括雪崩击穿效应，以对由于电子/空穴对的热生成导致高温击穿而产生的电流进行建模。开发了参数提取程序并用于提取不同温度下 HBT 的模型参数。开发了模型参数作为温度函数的拟合函数。然后，这些参数用于 SPICE Ebers-Moll 模型中，以在 (27/spl deg/-300/spl deg/C) 之间的任何温度下表征 HBT 的直流特性。 >
The large signal dc characteristics of AlGaAs/GaAs heterojunction bipolar transistors (HBT) at high temperatures (27/spl deg/-300/spl deg/C) are reported. A high-temperature SPICE model is developed which includes the recombination-generation current components and avalanche multiplication which become extremely important at high temperatures. The effect of avalanche breakdown is also included to model the current due to thermal generation of electron/hole pairs causing breakdown at high temperatures. A parameter extraction program is developed and used to extract the model parameters of HBT's at different temperatures. Fitting functions for the model parameters as a function of temperature are developed. These parameters are then used in the SPICE Ebers-Moll model for the dc characterization of the HBT at any temperature between (27/spl deg/-300/spl deg/C). >