Cleaning thin-film diamond surfaces for device fabrication: An Auger electron spectroscopic study
Cleaning thin-film diamond surfaces for device fabrication: An Auger electron spectroscopic study
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DOI：
10.1116/1.580063
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发表时间：
1996-07-01
期刊：
影响因子：
--
通讯作者：
Jackman, RB
中科院分区：
文献类型：
--
作者：
Baral, B;Chan, SSM;Jackman, RB
俄歇电子能谱被用来分析多晶薄膜金刚石表面后，使用不同的方法去除不需要的非金刚石碳。在生长过程结束时将膜暴露于氢等离子体对于产生给出具有很少污染的金刚石的典型俄歇光谱的表面是有效的。涉及硫酸的强氧化性溶液产生低浓度的表面硫以及氧化物相。然而，在过硫酸铵-硫酸蚀刻剂溶液的情况下，与金刚石相关的俄歇特征更接近于单晶材料的俄歇特征，这表明当在薄膜金刚石电子器件的制造期间使用时，这种处理可以提供更好的性能。(C)1996年美国真空学会。
Auger electron spectroscopy was used to analyze polycrystalline thin-film diamond surfaces following the use of differing methods for the removal of unwanted nondiamond carbon. Exposing the film to a hydrogen plasma at the termination of the growth process is effective for producing a surface that gives an Auger spectrum typical of diamond with little contamination. Strongly oxidizing solutions involving sulfuric acid generate low concentrations of surface sulfur together with an oxide phase. However, in the case of an ammonium persulfate-sulfuric acid etchant solution, the Auger features associated with the diamond more closely resemble those of single crystal material suggesting that this treatment may offer better performance when used during the fabrication of thin-film diamond electronic devices. (C) 1996 American Vacuum Society.