Optimization of a MoSe2 thin film deposition technique
Optimization of a MoSe2 thin film deposition technique
复制标题
DOI：
10.1016/0254-0584(88)90061-2
复制
发表时间：
1988-10
影响因子：
4.6
通讯作者：
J. Bernède;A. Mallouky;J. Pouzet
中科院分区：
文献类型：
--
作者：
J. Bernède;A. Mallouky;J. Pouzet
采用扫描电镜、电子探针分析、X射线分析、光吸收和电子能谱（XPS）对直流二极管溅射沉积mose2薄膜进行了研究。研究发现，对于任何类型的衬底，经过适当的退火，都可以得到化学计量薄膜。薄膜呈六角形结晶。XPS谱线的光学间隙和化学位移表明薄膜是由良好的mose2晶体组成的
MoSe2thin films deposited by DC diode sputtering have been investigated by scanning electron microscopy, electron microprobe analysis X ray analysis optical absorption and electron spectroscopy (XPS).It has been found that stoichiometric thin films are obtained after appropriate annealing for any kind of substrate. Thin films crystallize in the hexagonal structure The optical gaps and the chemical shifts of the XPS lines show that thin films are composed of good MoSe2crystallites