Atomic scale conductance induced by single impurity charging
Atomic scale conductance induced by single impurity charging
复制标题
DOI：
10.1103/physrevlett.94.076801
复制
发表时间：
2005-02-25
影响因子：
8.6
通讯作者：
Ho, W
中科院分区：
文献类型：
--
作者：
Pradhan, NA;Liu, N;Ho, W
用扫描隧道显微镜研究了NiAl(110)氧化生长的Al_2O_3上碱掺杂C-60单层晶体的电子输运。每个单独的碱原子与邻近的C-60分子形成局域络合物。对复合体充电会导致持续存在于复合体物理维度之外的电流大幅上升。这种电流上升的感应是通过空间分辨光谱和络合物附近的微分电导(Di/dV)的映射来表征的。
A scanning tunneling microscope was used to probe electron transport through an alkali doped C-60 monolayer crystal on Al2O3 grown by the oxidation of NiAl(110). Each individual alkali atom forms a localized complex with the neighboring C-60 molecules. Charging of the complex induces a substantial rise in the current that persists outside the physical dimensions of the complex. This induction of the current rise is characterized by spatially resolved spectroscopy and mapping of the differential conductance (dI/dV) in the vicinity of the complex.