Catalyst-free chemical vapor deposition route to InN nanowires and their cathodoluminescence properties
Catalyst-free chemical vapor deposition route to InN nanowires and their cathodoluminescence properties
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DOI：
10.1016/j.jallcom.2012.04.071
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发表时间：
2012-09
影响因子：
6.2
通讯作者：
M. Lei;K. Huang;R. Zhang;H. Yang;Xiuli Fu;Yonggang Wang;Weihua Tang
中科院分区：
文献类型：
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作者：
M. Lei;K. Huang;R. Zhang;H. Yang;Xiuli Fu;Yonggang Wang;Weihua Tang
采用无催化剂化学气相沉积法在 4H-SiC 衬底上生长 InN 纳米线。纳米线具有纤锌矿结构，长度可达数十微米。生长过程遵循典型的自催化气-液-固机制。初始非化学计量的 InNx 液滴有助于 InN 沿 c 轴的一维生长。单个纳米线的阴极发光光谱表明两个发射带分别以 1.70 和 1.38eV 为中心。 InN 纳米线的高电子浓度引起的 Burstein-Moss 位移应该是 1.70eV 发射带的原因，而 N 空位可能是 1.38eV 阴极发光发射的最可能原因。
InN nanowires were grown on 4H–SiC substrates by catalyst-free chemical vapor deposition method. The nanowires have wurtzite structure and the length is up to tens of micrometers. The growth process follows a typical self-catalyzed vapor–liquid–solid mechanism. The initial non-stoichiometric InNxdroplets assist the one-dimensional growth of InN along the c axis. Cathodoluminescence spectra of an individual nanowire indicate two emission bands centered at 1.70 and 1.38eV, respectively. Burstein-Moss shift induced by high electron concentrations of the InN nanowires should be responsible for the 1.70eV emission band, and N vacancies may be the most probable cause for the cathodoluminescence emission at 1.38eV.