Engineering Transport in Manganites by Tuning Local Nonstoichiometry in Grain Boundaries
Engineering Transport in Manganites by Tuning Local Nonstoichiometry in Grain Boundaries
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DOI：
10.1002/adma.201805360
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发表时间：
2019-01-25
影响因子：
29.4
通讯作者：
Tarancon, Albert
中科院分区：
文献类型：
--
作者：
Chiabrera, Francesco;Garbayo, Inigo;Tarancon, Albert
界面主导的材料，如纳米晶薄膜已经成为一个迷人的一类材料，能够工程的功能特性的过渡金属氧化物广泛用于能源和信息技术。特别地，已经证明锰氧化物的晶界中的应变诱导缺陷通过促进其氧质量传输同时减弱其电子和磁性有序而深刻地影响其功能性质。在这项工作中，这些戏剧性的变化的起源是相关的第一次与强烈修改的阴离子和阳离子组合物在应变晶界区域附近。我们还能够通过调整膜中的总体阳离子含量来改变晶界组成，这代表了一种新的强大的工具，超越了经典的空间电荷层效应，用于工程金属氧化物薄膜的电子和质量传输特性，可用于收集相关的固态设备。
Interface-dominated materials such as nanocrystalline thin films have emerged as an enthralling class of materials able to engineer functional properties of transition metal oxides widely used in energy and information technologies. In particular, it has been proven that strain-induced defects in grain boundaries of manganites deeply impact their functional properties by boosting their oxygen mass transport while abating their electronic and magnetic order. In this work, the origin of these dramatic changes is correlated for the first time with strong modifications of the anionic and cationic composition in the vicinity of strained grain boundary regions. We are also able to alter the grain boundary composition by tuning the overall cationic content in the films, which represents a new and powerful tool, beyond the classical space charge layer effect, for engineering electronic and mass transport properties of metal oxide thin films useful for a collection of relevant solid-state devices.