Single‐crystal Si islands on SiO2 obtained via excimer‐laser irradiation of a patterned Si film
Single‐crystal Si islands on SiO2 obtained via excimer‐laser irradiation of a patterned Si film
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通过准分子激光照射图案化硅薄膜获得的 SiO2 上的单晶硅岛
DOI：
10.1063/1.115812
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发表时间：
1996
期刊：
影响因子：
--
通讯作者：
J. Im
中科院分区：
文献类型：
--
作者：
H. Song;J. Im
我们开发了一种基于单脉冲的准分子激光晶化技术，可将光刻图案化和SiO2封装的a-Si区域转化为SiO2上的单晶岛。该方法利用在高衬底温度下可获得的基本上横向的生长距离，并结合对凝固前沿的演变的精确操纵，以便仅允许源自有意不完全熔化的几个晶粒中的一个（即，岛的种子）部分通过收缩并传播到岛的其余部分。这将岛的主要部分（其在横向尺寸上延伸数十微米）转换成无高角度晶界的晶体材料，只要岛的尺寸与可实现的超横向生长距离相称。
We have developed a single‐pulse based excimer‐laser crystallization technique that transforms photolithographically patterned and SiO2‐encapsulated a‐Si regions into single‐crystal islands on SiO2. The method utilizes the substantial superlateral growth distances that are attainable at high substrate temperatures in combination with precise manipulation of the evolution of the solidification front in order to allow only one of the several grains that originate from the intentionally incompletely melted (i.e., the seed) portion of an island to pass through a constriction and propagate into the rest of the island. This converts the main portion of the island, which extends tens of microns in the lateral dimensions, into a high‐angle‐grain boundary free crystalline material, in so far as the size of the island is commensurate with achievable superlateral growth distances.