Fe-implanted InGaAs photoconductive terahertz detectors triggered by 1.56μm femtosecond optical pulses
Fe-implanted InGaAs photoconductive terahertz detectors triggered by 1.56μm femtosecond optical pulses
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DOI：
10.1063/1.1901817
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发表时间：
2005-04
影响因子：
4
通讯作者：
Masato Suzuki;M. Tonouchi
中科院分区：
文献类型：
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作者：
Masato Suzuki;M. Tonouchi
在1.56μm激发波长下研究了InGaAs光导天线作为太赫兹探测器的性能。采用1.56μm飞秒光脉冲，通过Fe离子注入和400 ° C和580 °C退火，成功地探测到了时域THz波。注入态和低温退火态探测器探测到的太赫兹波的峰值幅度随着激发功率的增加而饱和。热退火对THz探测波形的频率分量和幅度都有影响。特别地，在580 °C下退火诱导信号幅度增加两倍。
Performance of InGaAs photoconductive antennas at an excitation wavelength of 1.56μm has been studied as a terahertz (THz) detector. THz waves in time domain are successfully detected, triggered with 1.56μm femtosecond optical pulses, owing to Fe implantation and annealing at 400 and 580 °C. The peak amplitudes of the THz detected waves by the as-implanted and the low-temperature-annealed detectors saturate with increasing the excitation power. The thermal annealing affects both the frequency component and the amplitude of the THz detected waveforms. In particular, annealing at 580 °C induces twice the increase in the amplitude of the signals.