Assessment of the Potential Diffusion Barriers between Tungsten and Silicon Carbide for Nuclear Fusion Application
Assessment of the Potential Diffusion Barriers between Tungsten and Silicon Carbide for Nuclear Fusion Application
复制标题
DOI：
10.3390/coatings12050639
复制
发表时间：
2022-05
期刊：
影响因子：
3.4
通讯作者：
Yi-Feng Du;Baopu Wang;Y. Zhong;T. Hinoki
中科院分区：
文献类型：
--
作者：
Yi-Feng Du;Baopu Wang;Y. Zhong;T. Hinoki
钨（W）材料是第一壁的候选材料，碳化硅（SiC）复合材料是核聚变中应用的结构材料的候选材料。SiC纤维增强W复合材料也被开发用于核聚变应用。需要有效的扩散阻挡层来防止W和SiC之间的反应。因此，在这项工作中，先进的陶瓷涂层，如氧化物（ZrO 2，TiO 2和Er 2 O 3），氮化物（ZrO N和TiN），碳化物（TiC和ZrO C）被选择来评估抑制反应的能力。使用浸渍方法在CVD（化学气相沉积）-SiC板上涂覆各种膜。此外，本文还对溅射法制备的氮化物薄膜进行了研究。然后通过将涂覆的CVD-SiC板与W箔接合来进行评价。只有多次浸渍的Er 2 O3涂层和溅射的氮化物与其他涂层相比工作得很好。对于其他氧化物涂层，氧化物和SiC之间的反应被确定，并且对于浸渍的氮化物和碳化物膜，在涂层上观察到裂纹，这是由与SiC衬底的热膨胀系数（CTE）失配以及氧化物转变为氮化物和碳化物的体积变化产生的。本工作为选择合适的SiC/W界面材料提供了建议。
A tungsten (W) material is a candidate for the first wall and silicon carbide (SiC) composites are candidates for the structural materials applied in nuclear fusion. SiC fiber-reinforced W composites are also developed for nuclear fusion applications. An effective diffusion barrier is required to prevent reaction between W and SiC. Therefore, in this work, advanced ceramics coatings, such as oxides (ZrO2, TiO2 and Er2O3), nitrides (ZrN and TiN), carbides (TiC and ZrC) were chosen to assess abilities to suppress the reactions. Various films were coated on a CVD (chemical vapor deposition)-SiC plate using the dipping method. Additionally, nitrides coatings prepared by the sputtering method were also investigated in this work. Then evaluations were carried out by joining the coated CVD-SiC plates with W foils. Only the multi-dipped Er2O3 coating and the sputtered nitrides worked well compared with the other coatings. For the other oxide coatings, reactions were identified between oxides and SiC, and for the dipped nitrides and carbides films, cracks were observed on the coating, generated from the coefficient of thermal expansion (CTE) mismatch with the SiC substrate and volume change for the oxides changing to nitrides and carbides. This work provides suggestions about choosing an appropriate interface material between SiC and W.