Patterning with spacer for expanding the resolution limit of current lithography tool
Patterning with spacer for expanding the resolution limit of current lithography tool
复制标题
使用间隔物进行图案化以扩大当前光刻工具的分辨率极限
DOI：
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发表时间：
2006
期刊：
影响因子：
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通讯作者：
Sung
中科院分区：
文献类型：
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作者：
W. Jung;Choi;Jae;Sung;Sung;Jong;Jae;Byung;Sung
Double Exposure Technology (DET) is one of the main candidates for expanding the resolution limit of current lithography tool. But this technology has some bottleneck such as controlling the CD uniformity and overlay of both mask involved in the lithography process. One way to solve this problem and still maintain the resolution advantage of DET is using spacers. Patterning with a spacer not only expands the resolution limit but also solves the problems involved with DET. This method realizes the interconnection between the cell and peripheral region by "space spacer" instead of "line spacer" as usually used. Spacer process involves top hard mask etch, nitride spacer, oxide deposition, CMP, and nitride strip steps sequentially. Peripheral mask was additionally added to realize the interconnection region. With the use of spacers, it was possible to realize the NAND flash memory gate pattern with less than 50nm feature only using 0.85NA (ArF).
