Effect of Fluorine in a Gate Insulator on the Reliability of Indium-Gallium-Zinc Oxide Thin-Film Transistors
Effect of Fluorine in a Gate Insulator on the Reliability of Indium-Gallium-Zinc Oxide Thin-Film Transistors
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DOI：
10.1149/2.0241605jss
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发表时间：
2016
影响因子：
2.2
通讯作者：
H. Yamazaki;Y. Ishikawa;F. Mami;J. Bermundo;E. Takahashi;Y. Andoh;Y. Uraoka
中科院分区：
文献类型：
--
作者：
H. Yamazaki;Y. Ishikawa;F. Mami;J. Bermundo;E. Takahashi;Y. Andoh;Y. Uraoka
研究了氟化氮化硅栅极绝缘子（GI）提高可靠性的机理。为了揭示sinx: F中氟对sinx: F与a-InGaZnO界面成键状态的影响，对金属（In, Ga, Zn）的成键状态进行了x射线光电子能谱分析。我们的分析表明，in - fx和In-OF键态在a-InGaZnO/GI界面形成，导致导带最小值附近的尾态数量减少。用拉伸指数方程描述了正偏置电流应力（PBCS）作用下阈值电压位移的时间演化行为。PBCS的结果表明，具有sinx: F GI的a-InGaZnO TFT具有更少的负电荷深阱，形成更有序的界面，很少形成起源于in的尾态，从而获得高可靠性的a-InGaZnO TFT。
Reliability improvement mechanism using a fluorinated silicon nitride (SiN x: F) gate insulator (GI) was investigated. X-ray photoelectron spectroscopy analysis was performed focusing on bonding state of metals (In, Ga, Zn), in order to reveal the effect of fluorine in SiN x: F on bonding state at the interface between SiN x: F and a-InGaZnO. Our analysis clarified that the In-F x and In-OF bonding states were formed at the a-InGaZnO/GI interface, leading to reducing the number of tail states near conduction band minimum. The behavior of time evolution of threshold voltage shift under positive-bias current stress (PBCS) was described by stretched-exponential equation. The result of PBCS assumed us that the a-InGaZnO TFTs with SiN x: F GI has fewer negatively charged deep trap and form more ordered interface with few tail state which originated in In was formed, leading to highly reliable a-InGaZnO TFT.