Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys
Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys
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DOI：
10.1063/1.5057424
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发表时间：
2019-08
影响因子：
4
通讯作者：
J. Occena;T. Jen;J. W. Mitchell;W. M. Linhart;E. Pavelescu;R. Kudrawiec;Y. Wang;R. Goldman
中科院分区：
文献类型：
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作者：
J. Occena;T. Jen;J. W. Mitchell;W. M. Linhart;E. Pavelescu;R. Kudrawiec;Y. Wang;R. Goldman
我们研究了GaAsNbi合金的能带隙和电子态与合金成分的关系。通过直接测量N和Bi摩尔分数，通过离子束分析，结合通过X射线摇摆曲线直接测量面外失配，我们确定了GaAsNbi合金与GaAs衬底晶格匹配的“魔术比”。此外，利用光反射光谱和光致发光光谱相结合的方法，我们绘制了能带隙的成分和失配关系图，并揭示了在价带最大值上方约0.18 eV处与铋相关的态的能量位置。我们研究了GaAsNbi合金的能带隙和电子态对合金成分的依赖关系。通过直接测量N和Bi摩尔分数，通过离子束分析，结合通过X射线摇摆曲线直接测量面外失配，我们确定了GaAsNbi合金与GaAs衬底晶格匹配的“魔术比”。此外，我们利用光反射和光致发光光谱相结合的方法，绘制了能带隙的成分与失配的关系图，并揭示了在价带最大值上方约0.18 eV处与铋相关的态的能量位置。
We have examined the alloy composition dependence of the energy bandgap and electronic states in GaAsNBi alloys. Using direct measurements of N and Bi mole fractions, via ion beam analysis, in conjunction with direct measurements of the out-of-plane misfit via x-ray rocking curves, we determine the “magic ratio” for lattice-matching of GaAsNBi alloys with GaAs substrates. In addition, using a combination of photoreflectance and photoluminescence spectroscopy, we map the composition- and misfit-dependence of the energy bandgaps, along with revealing the energetic position of Bi-related states at approximately 0.18 eV above the valence band maximum.We have examined the alloy composition dependence of the energy bandgap and electronic states in GaAsNBi alloys. Using direct measurements of N and Bi mole fractions, via ion beam analysis, in conjunction with direct measurements of the out-of-plane misfit via x-ray rocking curves, we determine the “magic ratio” for lattice-matching of GaAsNBi alloys with GaAs substrates. In addition, using a combination of photoreflectance and photoluminescence spectroscopy, we map the composition- and misfit-dependence of the energy bandgaps, along with revealing the energetic position of Bi-related states at approximately 0.18 eV above the valence band maximum.