Large-area photonic lift-off process for flexible thin-film transistors
Large-area photonic lift-off process for flexible thin-film transistors
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DOI：
10.1038/s41528-022-00145-z
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发表时间：
2022-02-28
影响因子：
14.6
通讯作者：
Swisher，Sarah L.
中科院分区：
文献类型：
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作者：
Weidling，Adam M.;Turkani，Vikram S.;Swisher，Sarah L.
在塑料上制造柔性电子经常受到聚合物基板尺寸稳定性差的限制。为了减轻压力，在制造过程中使用玻璃载体，但在不损害电子设备的情况下将塑料基板从载体上移除仍然具有挑战性。在这里，我们利用大面积、高通量的光子提离(PLO)工艺将聚合物薄膜从刚性载体中快速分离出来。PLO使用来自手电筒的150微米S脉冲宽带光，从涂有光吸收层(LAL)的玻璃载体基板上剥离功能薄膜。模拟表明，聚合物/LaL界面在PLO过程中达到800C以上，但PI的上表面保持在120C以下。在聚酰亚胺衬底上制备了一系列铟锌氧化物(IZO)薄膜晶体管(TFT)，并将其从玻璃载流子上光剥离。PLO对TFT的移动性没有影响。柔性TFT在机械上坚固耐用，在弯曲时不会降低机动性。
Fabricating flexible electronics on plastic is often limited by the poor dimensional stability of polymer substrates. To mitigate, glass carriers are used during fabrication, but removing the plastic substrate from a carrier without damaging the electronics remains challenging. Here we utilize a large-area, high-throughput photonic lift-off (PLO) process to rapidly separate polymer films from rigid carriers. PLO uses a 150 µs pulse of broadband light from flashlamps to lift-off functional thin films from glass carrier substrates coated with a light absorber layer (LAL). Modeling indicates that the polymer/LAL interface reaches above 800 C during PLO, but the top surface of the PI remains below 120 C. An array of indium zinc oxide (IZO) thin-film transistors (TFTs) was fabricated on a polyimide substrate and photonically lifted off from the glass carrier. The TFT mobility was unchanged by PLO. The flexible TFTs were mechanically robust, with no reduction in mobility while flexed.