Characterization and comparison of commercially available silicon carbide (SIC) power switches
Characterization and comparison of commercially available silicon carbide (SIC) power switches
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DOI：
10.1049/cp.2012.0168
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发表时间：
2012-03
影响因子：
6.7
通讯作者：
K. Haehre;M. Meisser;F. Denk;R. Kling
中科院分区：
文献类型：
--
作者：
K. Haehre;M. Meisser;F. Denk;R. Kling
本文介绍了商用SiC器件、常开和常关结型场效应管、MOSFET和高压Si-MOSFET的电学和热学特性。比较了上述特性，并指出了在设计基于SiC功率开关的电力电子器件时，哪些特性是限制因素。（6页）
In this paper the electrical and thermal characteristics of commercially available SiC devices, normally-on and -off JFETs as well as a MOSFET, and of a high-voltage Si- MOSFET are presented. The mentioned characteristics are compared and it is shown which characteristics are the limiting factors when designing power electronics devices based on SiC power switches. (6 pages)