Room temperature photoluminescence intensity enhancement in GaAs1‐xBix alloys
Room temperature photoluminescence intensity enhancement in GaAs1‐xBix alloys
复制标题
GaAs1-xBix 合金的室温光致发光强度增强
DOI：
--
复制
发表时间：
2012
期刊：
影响因子：
--
通讯作者：
J. David
中科院分区：
文献类型：
--
作者：
A. Mohmad;F. Bastiman;J. Ng;S. Sweeney;J. David
用光致发光（PL）方法研究了Bi组分在0.022 ~ 0.06之间的GaAs_（1-x）Bix合金的光学性质。使用分子束外延在400 °C下生长样品。在室温下，在GaAs中掺入Bi使带隙降低64 meV/%Bi，峰值波长为1.2 µm（x = 0.06）。结果表明，室温下发光强度随Bi组分的增加而增加，但在10 K时随组分的增加而降低。10 K下的结果表明，Bi的掺入降低了晶体质量。然而，这种效应被更有效的载流子限制所抵消，这是由于在室温下GaAs 1-xBix和GaAs之间的带隙偏移较大。因此，室温PL强度继续单调增加x高达0.06。（© 2012 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
The optical properties of GaAs1-xBix alloys with Bi compositions between 0.022 and 0.06 have been studied by photoluminescence (PL). The samples were grown at 400 °C using molecular beam epitaxy. At room temperature, the incorporation of Bi in GaAs reduces the band gap by 64 meV/%Bi with peak wavelength of 1.2 µm for x = 0.06. It was found that room temperature PL intensity increased with Bi composition, but decreases with composition at 10 K. The results at 10 K suggest that the incorporation of Bi degrades the crystal quality. However, the effect is negated by more efficient carrier confinement as a result of larger band gap offset between GaAs1-xBix and GaAs at room temperature. Hence, the room temperature PL intensity continues to increase monotonically for x up to 0.06. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)