Polarity Assignment in ZnTe, GaAs, ZnO, and GaN-AlN Nanowires from Direct Dumbbell Analysis
Polarity Assignment in ZnTe, GaAs, ZnO, and GaN-AlN Nanowires from Direct Dumbbell Analysis
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DOI：
10.1021/nl300840q
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发表时间：
2012-05-01
期刊：
影响因子：
10.8
通讯作者：
Arbiol, Jordi
中科院分区：
文献类型：
--
作者：
de la Mata, Maria;Magen, Cesar;Arbiol, Jordi
利用具有高角度环状暗场(HAADF)成像的像差校正扫描电子显微镜(STEM)和新发展的环状亮场(ABF)成像，定义了在两种极端情况下从二元化合物中确定半导体纳米线(NWS)极性的新准则：(I)当哑铃是由质量相似的原子(GaAs)形成时；(Ii)当其中一个原子非常轻(N或O：ZnO和GaN/AlN)时。这些程序的理论基础使我们能够克服识别哑铃极性的主要挑战。它存在于哑铃中组成原子的分离和识别。提出的实验通孔为精细表征纳米结构开辟了新的途径，例如在电子和光电子领域，其中极性对于理解它们的物理性质(光学和电子)以及它们的生长机制是至关重要的。
Aberration corrected scanning transmission electron microscopy (STEM) with high angle annular dark field (HAADF) imaging and the newly developed annular bright field (ABF) imaging are used to define a new guideline for the polarity determination of semiconductor nanowires (NWs) from binary compounds in two extreme cases: (i) when the dumbbell is formed with atoms of similar mass (GaAs) and (ii) in the case where one of the atoms is extremely light (N or O: ZnO and GaN/AlN). The theoretical fundaments of these procedures allow us to overcome the main challenge in the identification of dumbbell polarity. It resides in the separation and identification of the constituent atoms in the dumbbells. The proposed experimental via opens new routes for the fine characterization of nanostructures, e.g., in electronic and optoelectronic fields, where the polarity is crucial for the understanding of their physical properties (optical and electronic) as well as their growth mechanisms.