Angular magnetoresistance in semiconducting undoped amorphous carbon thin films
Angular magnetoresistance in semiconducting undoped amorphous carbon thin films
复制标题
半导体未掺杂非晶碳薄膜中的角磁阻
DOI：
10.1063/1.4919820
复制
发表时间：
2015
影响因子：
3.2
通讯作者：
Zhang Xiaozhong
中科院分区：
文献类型：
--
作者：
Sagar Rizwan Ur Rehman;Saleemi Awais Siddique;Zhang Xiaozhong
采用化学气相沉积法制备了非掺杂非晶碳薄膜，并利用高分辨透射电子显微镜和拉曼光谱对其结构进行了研究。在2 ~ 40 K温度范围内首次观察到非掺杂非晶碳薄膜的角磁电阻效应。角磁电阻的最大值在2 ℃ 40 K时为9.5%~ 1.5%。本文还讨论了这种角磁共振的起源。
Thin films of undoped amorphous carbon thin film were fabricated by using Chemical Vapor Deposition and their structure was investigated by using High Resolution Transmission Electron Microscopy and Raman Spectroscopy. Angular magnetoresistance (MR) has been observed for the first time in these undoped amorphous carbon thin films in temperature range of 2 ∼ 40 K. The maximum magnitude of angular MR was in the range of 9.5% ∼ 1.5% in 2 ∼ 40 K. The origin of this angular MR was also discussed.