Effect of resonant tunneling on exciton dynamics in coupled dot-well nanostructures
Effect of resonant tunneling on exciton dynamics in coupled dot-well nanostructures
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DOI：
10.1063/1.4801891
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发表时间：
2013-04-21
影响因子：
3.2
通讯作者：
Salamo, G. J.
中科院分区：
文献类型：
--
作者：
Guzun, D.;Mazur, Yu. I.;Salamo, G. J.
利用飞秒泵浦探测反射和连续波(CW)光致发光光谱研究了InAs量子点(QD)和InGaAs量子阱(QW)组成的混合点-井系统中的激子动力学。该系统被设计成使QW基激子态与第三QD激发态发生共振。通过改变QD和QW层之间的有效势垒厚度来改变共振隧穿速率。与孤立的量子波或量子点系统相比，这对这些混合结构中的激子动力学有很大的影响。光学测量的耦合系统的衰减时间对温度变化的响应随共振隧穿强度或耦合强度的不同而显著不同。这反映了纯量子力学和热力学过程之间的竞争。(C)2013 AIP出版有限责任公司。
Excitonic dynamics in a hybrid dot-well system composed of InAs quantum dots (QDs) and an InGaAs quantum well (QW) is studied by means of femtosecond pump-probe reflection and continuous wave (cw) photoluminescence (PL) spectroscopy. The system is engineered to bring the QW ground exciton state into resonance with the third QD excited state. The resonant tunneling rate is varied by changing the effective barrier thickness between the QD and QW layers. This strongly affects the exciton dynamics in these hybrid structures as compared to isolated QW or QD systems. Optically measured decay times of the coupled system demonstrate dramatically different response to temperature change depending on the strength of the resonant tunneling or coupling strength. This reflects a competition between purely quantum mechanical and thermodynamical processes. (C) 2013 AIP Publishing LLC.