Empirical Model for the Effective Electron Mobility in Silicon Nanowires
Empirical Model for the Effective Electron Mobility in Silicon Nanowires
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DOI：
10.1109/ted.2014.2354254
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发表时间：
2014-09
影响因子：
3.1
通讯作者：
R. Granzner;V. Polyakov;C. Schippel;F. Schwierz
中科院分区：
文献类型：
--
作者：
R. Granzner;V. Polyakov;C. Schippel;F. Schwierz
提出了一个计算硅纳米线中有效电子迁移率的经验模型。该模型是基于已发表的迁移率数据从不同的横截面的硅纳米线的电子输运的数值模拟。声子散射和表面粗糙度散射以及有效垂直场的影响被认为是。从文献中的各种实验流动性数据的比较表明，该模型可以被视为基准不同的NW技术的参考。有效场的依赖性是由一个简单的表达式建模，使我们的迁移率模型非常有效的数值器件模拟器或分析MOSFET模型中使用。
An empirical model for the effective electron mobility in silicon nanowires (SiNWs) is presented. The model is based on published mobility data from numerical simulations of electron transport in SiNWs with different cross sections. Both phonon scattering and surface roughness scattering as well as the impact of the effective vertical field are considered. A comparison with a variety of experimental mobility data from the literature shows that the model can be treated as a reference for benchmarking different NW technologies. The effective field dependence is modeled by a simple expression making our mobility model very efficient for the use in numerical device simulators or in analytical MOSFET models.