Visible luminescence from a-SiN films doped with Er and Sm
Visible luminescence from a-SiN films doped with Er and Sm
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DOI：
10.1063/1.1389069
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发表时间：
2001-07
影响因子：
4
通讯作者：
A. Zanatta;C. Ribeiro;U. Jahn
中科院分区：
文献类型：
--
作者：
A. Zanatta;C. Ribeiro;U. Jahn
Er ~（3+）和Sm ~（3+）分别掺杂的非晶（a-）SiN薄膜获得了较强和窄的红光和绿色光发射。在纯氮气氛中，通过共溅射部分覆盖有小片金属Er（和Sm）的Si靶来沉积膜。作为沉积方法和条件的结果，膜具有非晶结构，并且Er（和Sm）的含量在低的0.5at. %.所有的表征都是在室温下完成的，包括：离子束分析（卢瑟福背散射光谱法和核反应分析）和光学技术（光吸收，拉曼散射，光致发光和阴极发光）。实验结果的详细检查允许识别存在于膜中的所有发光特征。
Relatively strong and narrow red and green light emission has been achieved from amorphous (a-) SiN films independently doped with Er3+ and Sm3+ ions. The films were deposited by cosputtering a Si target partially covered with small pieces of metallic Er (and Sm) in an atmosphere of pure nitrogen. As a consequence of the deposition method and conditions, the films have an amorphous structure, and contents of Er (and Sm) in the low 0.5 at. %. All characterizations were accomplished on as-deposited samples and at room temperature and included: ion-beam analysis (Rutherford backscattering spectrometry and nuclear reaction analysis) and optical techniques (light absorption, Raman scattering, and photoluminescence and cathodoluminescence). A detailed examination of the experimental results allowed the identification of all luminescence features existing in the films.