Inter-dot coupling and excitation transfer mechanisms of telecommunication band InAs quantum dots at elevated temperatures
Inter-dot coupling and excitation transfer mechanisms of telecommunication band InAs quantum dots at elevated temperatures
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DOI：
10.1088/1367-2630/14/2/023037
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发表时间：
2012-02
影响因子：
3.3
通讯作者：
C. Hermannstädter;N. A. Jahan;J. Huh;H. Sasakura;K. Akahane;M. Sasaki;I. Suemune
中科院分区：
文献类型：
--
作者：
C. Hermannstädter;N. A. Jahan;J. Huh;H. Sasakura;K. Akahane;M. Sasaki;I. Suemune
我们研究了在光通信波段发射的单个 InAs/InGaAlAs 量子点的光致发光温度依赖性。高密度点生长在 InP 衬底上，并通过加工合适的纳米尺寸台面来选择较小的点数量。使用此类台面内仅几个点的集合，系统地研究了它们的温度稳定性、点间电荷转移以及点外的载流子捕获和逃逸机制。这包括点整体和单个点的讨论。在单点特性中，我们研究了发射线从零声子线到声学声子边带主导的线形状随温度的转变。此外，还证明了在高达约 150 K 的温度下仍存在单一复合线。
We investigate the photoluminescence temperature dependence of individual InAs/InGaAlAs quantum dots emitting in the optical telecommunication bands. The high-density dots are grown on InP substrates and the selection of a smaller dot number is done by the processing of suitable nanometer-sized mesas. Using ensembles of only a few dots inside such mesas, their temperature stability, inter-dot charge transfer, as well as carrier capture and escape mechanisms out of the dots are investigated systematically. This includes the discussion of the dot ensemble and individual dots. Among the single-dot properties, we investigate the transition of emission lines from zero-phonon line to acoustic phonon sideband-dominated line shape with temperature. Moreover, the presence of single recombination lines up to temperatures of about 150 K is demonstrated.