Observation of enhanced photoluminescence from silicon photonic crystal nanocavity at room temperature
Observation of enhanced photoluminescence from silicon photonic crystal nanocavity at room temperature
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DOI：
10.1063/1.2816892
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发表时间：
2007-11
影响因子：
4
通讯作者：
S. Iwamoto;Y. Arakawa;A. Gomyo
中科院分区：
文献类型：
--
作者：
S. Iwamoto;Y. Arakawa;A. Gomyo
我们制造了空气桥型硅光子晶体（PC）纳米腔，并观察到晶体硅在室温下光致发光（PL）的显着增强。当 PC 的周期增加时，空腔谐振峰向更长的波长移动，并且它们的偏振依赖性与计算结果一致。在腔模波长下，与未图案化的绝缘体上硅基板相比，PL 强度增强了 310 倍。
We fabricated air-bridge-type silicon photonic crystal (PC) nanocavities and observed significant enhancement of photoluminescence (PL) from crystalline silicon at room temperature. Cavity-resonant peaks shifted toward longer wavelengths when the period of PC was increased and their polarization dependences agree with the calculation. At a cavity mode wavelength, a 310-fold enhancement of PL intensity, compared with that of unpatterned silicon-on-insulator substrate, was demonstrated.