Improved Electrical Properties of Ge p-MOSFET With $ \hbox{HfO}_{2}$ Gate Dielectric by Using $\hbox{TaO}_{x} \hbox{N}_{y}$ Interlayer
Improved Electrical Properties of Ge p-MOSFET With $ \hbox{HfO}_{2}$ Gate Dielectric by Using $\hbox{TaO}_{x} \hbox{N}_{y}$ Interlayer
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DOI：
10.1109/led.2008.2004282
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发表时间：
2008-09
影响因子：
4.9
通讯作者：
Jiqu Xu;Xiaoyu Zhang;Cheng Li;P. T. Lai;C. Chan
中科院分区：
文献类型：
--
作者：
Jiqu Xu;Xiaoyu Zhang;Cheng Li;P. T. Lai;C. Chan
研究了叠栅介质为HfO2/TaOxNy的锗p-金属氧化物半导体(p-MOS)电容器和p-MOS场效应晶体管(FET)的电学特性。实验结果表明，与仅使用HfO2作为栅介质的MOS器件相比，MOS器件具有更低的栅漏电流、良好的界面特性和良好的晶体管特性，空穴迁移率比传统的Sip-MOSFET提高约1.7倍。这些结果表明，在高k介质沉积前在Ge表面形成超薄的TaOxNy钝化层，可以有效地抑制不稳定Geox的生长，从而减少界面态，提高Ge基晶体管反型沟道中的载流子迁移率。
The electrical characteristics of germanium p-metal-oxide-semiconductor (p-MOS) capacitor and p-MOS field-effect transistor (FET) with a stack gate dielectric of HfO2/TaOxNy are investigated. Experimental results show that MOS devices exhibit much lower gate leakage current than MOS devices with only HfO2 as gate dielectric, good interface properties, good transistor characteristics, and about 1.7-fold hole-mobility enhancement as compared with conventional Si p-MOSFETs. These demonstrate that forming an ultrathin passivation layer of TaOxNy on germanium surface prior to deposition of high-k dielectrics can effectively suppress the growth of unstable GeOx, thus reducing interface states and increasing carrier mobility in the inversion channel of Ge-based transistors.