Thin film bilayers of multiferroic bismuth ferrite on Pt–Si substrate
Thin film bilayers of multiferroic bismuth ferrite on Pt–Si substrate
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DOI：
10.1002/pssr.201004473
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发表时间：
2011-02
期刊：
影响因子：
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通讯作者：
Jiagang Wu;John Wang;D. Xiao;Jianguo Zhu
中科院分区：
文献类型：
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作者：
Jiagang Wu;John Wang;D. Xiao;Jianguo Zhu
采用射频溅射的方法在Pt/TiO2/SiO2/Si衬底上沉积了多铁/多铁BiFeO3/Bi0.90La0.10Fe0.90Zn0.10O3 （BFO/BLFZO）双分子层。BLFZO层对BFO层的相纯度、取向生长和漏电流影响较大。该双层电容器具有高介电常数（~ 162）和改善的磁性能（2Ms ~ 34.6 emu/cm3），同时具有优异的疲劳耐久性。该双层电容器的剩余极化值为2Pr ~ 116.2 μC/cm2，优于已有报道的BFO双层电容器。阻抗研究表明，较低的自由移动电荷是BFO/BLFZO双分子层电学性能改善的原因。（©2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim）
A multiferroics/multiferroics BiFeO3/Bi0.90La0.10Fe0.90Zn0.10O3 (BFO/BLFZO) bilayer was deposited on Pt/TiO2/SiO2/Si substrates by radio frequency sputtering. The BLFZO layer strongly affects the phase purity, orientation growth, and leakage current of BFO layer. The bilayered capacitor exhibits a high dielectric permittivity of ∼162 and an improved magnetic behavior of 2Ms ∼ 34.6 emu/cm3, together with an excellent fatigue endurance. A remanent polarization of 2Pr ∼ 116.2 μC/cm2 for the bilayered capacitor is better than those of reported BFO bilayers. The impedance study indicates that lower freely mobile charges are responsible for the improved electrical behavior of the BFO/BLFZO bilayer. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)