Nanometer-scale strain measurements in semiconductors: An innovative approach using the plasmon peak in electron energy loss spectra
Nanometer-scale strain measurements in semiconductors: An innovative approach using the plasmon peak in electron energy loss spectra
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DOI：
10.1063/1.2169904
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发表时间：
2006-02
影响因子：
4
通讯作者：
A. Sánchez;R. Beanland;A. Papworth;P. Goodhew;M. Gass
中科院分区：
文献类型：
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作者：
A. Sánchez;R. Beanland;A. Papworth;P. Goodhew;M. Gass
我们提出了一种创新的技术，用于定量测量半导体材料中的应变与高空间分辨率。电子能量损失谱中的等离激元损失峰被认为遵循Drude-Lorentz模型，我们发现等离激元能量对晶格参数非常敏感。我们已经测试了这个模型使用的异质结构的In0.2Ga0.8As和AlAs层的GaAs。实验数据与模型吻合良好。我们估计可以检测到小于0.036%的应变，对应于InxGa 1 −xAs中x=0.005的变化，空间分辨率优于2.8 nm。
We present an innovative technique for quantitative measurement of strain in semiconductor materials with high spatial resolution. The plasmon loss peak, seen in electron energy-loss spectra, has been considered following the Drude-Lorentz model, and we find that plasmon energy is extremely sensitive to lattice parameter. We have tested this model using a heterostructure of In0.2Ga0.8As and AlAs layers in GaAs. The experimental data are in excellent agreement with the model. We estimate that strains smaller than 0.036% can be detected, corresponding to a change of x=0.005 in InxGa1−xAs, at a spatial resolution better than 2.8 nm.