Epitaxial growth of manganese silicide nanowires on Si(111)-7×7 surfaces
Epitaxial growth of manganese silicide nanowires on Si(111)-7×7 surfaces
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DOI：
10.1063/1.2717580
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发表时间：
2007-03
影响因子：
4
通讯作者：
Z. Zou;Hongyang Wang;Dong Wang;Q.-K. Wang;Jiajun Mao;X. Kong
中科院分区：
文献类型：
--
作者：
Z. Zou;Hongyang Wang;Dong Wang;Q.-K. Wang;Jiajun Mao;X. Kong
用扫描隧道显微镜研究了硅化锰在Si（111）-7 7表面低覆盖率的反应外延生长。除了先前在Mn scinSi系统上观察到的平板状和三维岛之外，还发现Mn硅化物在温度高于1500 °C时在Si（111）-7 7表面上形成纳米线（NW）。NW沿着[101 <$$>]、[011 <$$>]和[11 <$0]方向定向，这三个方向具有相等的概率。在超细NW上观察到的有序原子排列表明NW是结晶的。扫描隧道光谱测量表明，纳米线表现出半导体特性，其带隙为0.8eV，这与体MnSi 1.7的带隙一致。
Reactive epitaxial growth of manganese silicide on a Si(111)-7×7 surface at low coverage is studied using scanning tunneling microscopy. Besides tabular and three-dimensional islands observed previously on the Mn∕Si system, Mn silicide is found to form nanowires (NWs) on the Si(111)-7×7 surface at temperatures above ∼500°C. The NWs oriented along [101¯], [011¯], and [11¯0], three equivalent directions, with equal probability. Well-ordered atomic arrangement observed on an ultrafine NW indicates that the NWs are crystalline. Scanning tunneling spectroscopy measurements show that the NWs exhibit a semiconducting character with a band gap of ∼0.8eV, which is consistent with that of bulk MnSi1.7.