SiC2 Siligraphene and Nanotubes: Novel Donor Materials in Excitonic Solar Cells
SiC2 Siligraphene and Nanotubes: Novel Donor Materials in Excitonic Solar Cells
复制标题
SiC2 硅石墨烯和纳米管:激子太阳能电池中的新型供体材料
DOI:
10.1021/nl403010s
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发表时间:
2013
期刊:
影响因子:
10.8
通讯作者:
Wu Liming
中科院分区:
文献类型:
--
作者:
Zhou Liujiang;Zhang Yongfan;Wu Liming
In excitonic solar cells (XSC), power conversion efficiency (PCE) depends critically on the interface band alignment between donor and acceptor materials. Graphene or silicene is not suitable for donor materials due to their semimetallic features (zero band gaps); it is therefore highly desired to open an energy gap in graphene or silicene to extend their application in optoelectronic devices, especially in photovoltaics. In this paper, based on the global particle-swarm optimization algorithm and the density functional theory methods, we predict a novel SiC2siligraphene (g-SiC2) with a direct band gap of 1.09 eV showing infinite planar geometry, in which Si and C atoms adopt sp2hybridization and C atoms form delocalized 4 C-domains that are periodically separated by Si atoms. Such a g-SiC2siligraphene (with a global minimum of energy) is 0.41 eV/atom lower and thermally stabler than the isomeric pt-SiC2silagraphene containing planar 4-fold coordinated silicon (3000 K vs 1000 K). Interestingly, the derivative (n, 0), (n,n) nanotubes (with diameters greater than 8.0 Å) have band gaps about 1.09 eV, which are independent of the chirality and diameter. Besides, a series of g-SiC2/GaN bilayer and g-SiC2nanotube/ZnO monolayer XSCs have been proposed, which exhibit considerably high PCEs in the range of 12–20%.