Improved Performance of YIG(Y3Fe5O12) Films Grown on Pt-Buffered Si Substrates by Chemical Solution Deposition Technique
Improved Performance of YIG(Y3Fe5O12) Films Grown on Pt-Buffered Si Substrates by Chemical Solution Deposition Technique
复制标题
通过化学溶液沉积技术在 Pt 缓冲硅衬底上生长的 YIG(Y3Fe5O12) 薄膜的性能改进
DOI：
10.1111/jace.14293
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发表时间：
2016
影响因子：
3.9
通讯作者：
Dong Xianlin
中科院分区：
文献类型：
--
作者：
Guo Xin;Chen Ying;Wang Genshui;Ge Jun;Zhang Yuanyuan;Tang Xiaodong;Ponchel Freddy;Remiens Denis;Dong Xianlin
采用化学溶液沉积技术在铂（Pt）缓冲的Si衬底上生长了具有无裂纹表面和改善磁性能的高质量钇铁石榴石（YIG）薄膜。所得YIG薄膜的饱和磁化强度可达124 emu/cm ~ 3，为YIG单晶理论值的88%。并讨论了退火条件的影响。当在750°C下退火1 h时，YIG薄膜显示出非常小的矫顽场为12 Oe，并且在9.10 GHz下峰-峰铁磁共振线宽可以低至95 Oe。结果表明，在Pt缓冲Si衬底上制备的YIG薄膜有利于YIG薄膜在集成器件中的应用。
High‐quality Yttrium iron garnet (YIG) films with crack‐free surface and improved magnetic performance were grown on platinum (Pt)‐buffered Si substrates by chemical solution deposition technique. The saturation magnetization of obtained YIG films can reach 124 emu/cm3, which was the 88% theoretical value of YIG single crystal. The effects of annealing condition were also discussed. When annealed at 750°C for 1 h, YIG films showed a very small coercive field of 12 Oe and the peak‐to‐peak ferromagnetic resonance linewidth can be as low as 95 Oe at 9.10 GHz. The results demonstrated that YIG films prepared on Pt‐buffered Si substrates can be beneficial to the application of YIG films to integrated devices.