Modeling the effects of temporal proximity of input transitions on gate propagation delay and transition time
Modeling the effects of temporal proximity of input transitions on gate propagation delay and transition time
复制标题
模拟输入转换的时间接近度对门传播延迟和转换时间的影响
DOI:
10.1109/dac.1996.545649
复制
发表时间:
1996
期刊:
影响因子:
--
通讯作者:
K. Sakallah
中科院分区:
文献类型:
--
作者:
V. Chandramouli;K. Sakallah
While delay modeling of gates with a single switching input has received considerable attention, the case of multiple inputs switching in close temporal proximity is just beginning to be addressed in the literature. The effect of proximity of input transitions can be significant on the delay and output transition time. The few attempts that have addressed this issue are based on a series-parallel transistor collapsing method that reduces the multi-input gate to an inverter. This limits the technique to CMOS technology. Moreover, none of them discuss the appropriate choice of voltage thresholds to measure delay for a multi-input gate. In this paper, we first present a method for the choice of voltage thresholds for a multi-input gate that ensures a positive value of delay under all input conditions. We next introduce a dual-input proximity model for the case when only two inputs of the gate are switching. We then propose a simple approximate algorithm for calculating the delay and output transition time that makes repeated use of the dual-input proximity model without collapsing the gate into an equivalent inverter. Comparison with simulation results shows that our method performs quite well in practice.