Novel terahertz emission devices based on efficient optical frequency conversion in GaAs/AlAs coupled multilayer cavity structures on high-index substrates
Novel terahertz emission devices based on efficient optical frequency conversion in GaAs/AlAs coupled multilayer cavity structures on high-index substrates
复制标题
基于高折射率衬底上 GaAs/AlAs 耦合多层腔结构中高效光学频率转换的新型太赫兹发射器件
DOI：
10.1117/12.872103
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
and T. Isu
中科院分区：
文献类型：
--
作者：
T. Kitada;F. Tanaka;T. Takahashi;K. Morita;and T. Isu
高折射率衬底上的GaAs/AlAs耦合多层腔结构是一种新型的太赫兹辐射器件。当两个腔层通过中间分布布拉格反射器多层膜耦合时，实现了在太赫兹区域具有光频差的两个腔模。利用传输矩阵法模拟了超短脉冲激光的光学响应。当腔模被100 fs高斯脉冲同时激发时，腔模的增强光场之间的干涉被证明。在（113）B耦合多层腔中实验观察到极强的和频产生。我们还发现，通过圆片键合实现偏振控制可能是产生双模太赫兹差频信号的最佳方法之一。
GaAs/AlAs coupled multilayer cavity structures on high-index substrates have been proposed as novel terahertz emission devices. Two cavity modes with an optical frequency difference in the terahertz region are realized when two cavity layers are coupled by an intermediate distributed Bragg reflector multilayer. Optical responses to ultrashort laser pulses have been simulated using the transfer matrix method. Interference between the enhanced light fields of the cavity modes was demonstrated when they were simultaneously excited by 100 fs Gaussian pulses. Extremely strong sum-frequency generation was experimentally observed in the (113)B coupled multilayer cavity. We also found that the polarization control by wafer-bonding might be one of the best ways to generate terahertz difference-frequency signal of two modes.