4H–SiC Lateral Double RESURF MOSFETs With Low on Resistance
4H–SiC Lateral Double RESURF MOSFETs With Low on Resistance
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DOI：
10.1109/ted.2007.894249
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发表时间：
2007-05
影响因子：
3.1
通讯作者：
M. Noborio;J. Suda;T. Kimoto
中科院分区：
文献类型：
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作者：
M. Noborio;J. Suda;T. Kimoto
研究了具有双减表面场 (RESURF) 结构的 4H-SiC (0001) 横向 MOSFET 的设计和制造，以降低导通电阻。为了实现高击穿电压，除了双RESURF结构外，还采用了两区RESURF结构。与模拟的单 RESURF MOSFET 相比，具有最佳剂量的模拟双 RESURF MOSFET 表现出略高的击穿电压和更低的漂移电阻。双 RESURF 结构对于抑制栅极边缘的氧化物击穿很有吸引力。经过剂量优化的器件模拟后，采用自对准工艺制造了 4H-SiC 两区双 RESURF MOSFET。所制造的 MOSFET 具有 1380 V 的高击穿电压和 66 mΩcm2 的低导通电阻（包括 24 mΩcm2 的漂移电阻）。所制造的双RESURF MOSFET的漂移电阻仅为单RESURF MOSFET的50%甚至更低
Designing and fabrication of 4H-SiC (0001) lateral MOSFETs with a double reduced surface field (RESURF) structure have been investigated to reduce ON resistance. In order to achieve high breakdown voltage, a two-zone RESURF structure was also employed in addition to the double RESURF structure. The simulated double RESURF MOSFETs with optimum doses exhibit slightly higher breakdown voltage and lower drift resistance than the simulated single RESURF MOSFETs. The double RESURF structure is attractive to suppress oxide breakdown at gate edge. After the device simulation for dose optimization, the 4H-SiC two-zone double RESURF MOSFETs have been fabricated by using a self-aligned process. The fabricated MOSFET has demonstrated a high breakdown voltage of 1380 V and a low ON resistance of 66 mOmegamiddotcm2 (including a drift resistance of 24 mOmegamiddotcm2). The drift resistance of the fabricated double RESURF MOSFETs is only 50% or even lower than that of the single RESURF MOSFETs