Deep ultraviolet distributed Bragg reflectors based on graded composition AlGaN alloys
Deep ultraviolet distributed Bragg reflectors based on graded composition AlGaN alloys
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DOI：
10.1063/1.4922215
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发表时间：
2015-06-01
影响因子：
4
通讯作者：
Moustakas, T. D.
中科院分区：
文献类型：
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作者：
Brummer, Gordie;Nothern, Denis;Moustakas, T. D.
采用等离子体辅助分子束外延技术在6 H-SiC衬底上生长了分布布拉格反射器（DBR），其峰值反射率约为280 nm。采用传递矩阵法设计了方形、正弦形、三角形和矩形四种组成分布的DBR。这些DBR的晶体结构进行了研究与（015）倒易晶格点的高分辨率X射线衍射。DBR曲线的周期性用横截面Z-对比扫描透射电子显微镜证实。具有15.5个周期的这些DBR的峰值反射率在77%到56%之间变化，相应的半峰全宽为17-14 nm。耦合模分析被用来解释的反射率特性的梯度成分的轮廓的依赖关系。(C)2015 AIP Publishing LLC.
Distributed Bragg reflectors (DBRs) with peak reflectivity at approximately 280 nm, based on compositionally graded AlxGa1-xN alloys, were grown on 6H-SiC substrates by plasma-assisted molecular beam epitaxy. DBRs with square, sinusoidal, triangular, and sawtooth composition profiles were designed with the transfer matrix method. The crystal structure of these DBRs was studied with high-resolution x-ray diffraction of the (015) reciprocal lattice point. The periodicity of the DBR profiles was confirmed with cross-sectional Z-contrast scanning transmission electron microscopy. The peak reflectance of these DBRs with 15.5 periods varies from 77% to 56% with corresponding full width at half maximum of 17-14 nm. Coupled mode analysis was used to explain the dependence of the reflectivity characteristics on the profile of the graded composition. (C) 2015 AIP Publishing LLC.