Extent and feature of lattice distortions around Ga impurity atoms in InSb single crystal
Extent and feature of lattice distortions around Ga impurity atoms in InSb single crystal
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DOI：
10.1103/physrevb.87.094104
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发表时间：
2013-03-08
影响因子：
3.7
通讯作者：
Hayashi, K.
中科院分区：
文献类型：
--
作者：
Hosokawa, S.;Happo, N.;Hayashi, K.
为了阐明在InSb晶体中添加Ga原子所引起的晶格畸变，在In0.995Ga0.005Sb稀混单晶上进行了Ga K α x射线荧光全息（XFH）实验，并重建了Ga原子周围的三维原子图像。虽然原子图像几乎位于InSb晶体的理想位置，但仅对于第一和第二相邻原子可以观察到一些差异。通过将它们与X射线吸收精细结构数据相结合，第一相邻原子在角方向上出现大的空间波动，这可以从目前的XFH结果中澄清。从XFH的结果，它的结论是，晶格畸变是有限的第二邻居在这个稀释的混合晶体，在之前报道的重掺杂的Zn0.4Mn0.6Te的混合晶体中的五个化学键。DOI：10.1103/PhysRevB.87.094104
To clarify lattice distortions induced by adding Ga atoms in the InSb crystal, Ga K alpha x-ray fluorescence holography (XFH) experiments were carried out on an In0.995Ga0.005Sb diluted mixed single crystal, and three-dimensional atomic images around the Ga atoms were reconstructed. Although the atomic images are located almost at ideal positions of the InSb crystal, some differences can be observed for only the first-and second-neighboring atoms. By combining them with x-ray absorption fine structure data, large spatial fluctuations of the first-neighboring atoms appear in the angular direction, which can be clarified from the present XFH results. From the XFH results, it is concluded that lattice distortions are limited within the second neighbors in this diluted mixed crystal, in contrast to five chemical bonds in a heavily doped mixed crystal of Zn0.4Mn0.6Te reported previously. DOI: 10.1103/PhysRevB.87.094104