Evolution of InAs islands in the Stranski-Krastanow mode of InAs/GaAs (001) fabricated using molecular beam epitaxy
Evolution of InAs islands in the Stranski-Krastanow mode of InAs/GaAs (001) fabricated using molecular beam epitaxy
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DOI：
10.1007/s11467-007-0012-9
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发表时间：
2007-03
影响因子：
--
通讯作者：
Jin Pen;Wu Ju;Jiao Yu-heng;LV Xiao-jing;Wang Zhanguo
中科院分区：
文献类型：
--
作者：
Jin Pen;Wu Ju;Jiao Yu-heng;LV Xiao-jing;Wang Zhanguo
基于原子力显微镜的分步观察，在分子束外延InAs/GaAs（001）系统的Stranski-Krastanow模式中，根据三维InAs岛的演化，区分出两个明显的连续相。初始阶段符合幂律，后一阶段是一个相对渐进的阶段。
Based on step-by-step observation using atomic force microscope, two distinctive successive phases were distinguished in accordance with evolution of the three-dimensional InAs islands during the Stranski-Krastanow mode of the InAs/GaAs(001) system fabricated using molecular-beam epitaxy. The initial phase is consistent with a power law, and the latter phase is a comparatively gradual one.