Modification of Silicon Surface Using Atomic Force Microscope with Conducting Probe
Modification of Silicon Surface Using Atomic Force Microscope with Conducting Probe
复制标题
使用带有传导探针的原子力显微镜对硅表面进行改性
DOI：
10.1143/jjap.32.l1021
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发表时间：
1993
影响因子：
1.5
通讯作者：
T. Hattori
中科院分区：
文献类型：
--
作者：
M. Yasutake;Yasunori Ejiri;T. Hattori
它表明，近原子平坦的Si（100）表面钝化与自然氧化物可以修改通过施加负电位的原子力显微镜（AFM）的导电探针相对于硅衬底。通过对电子束激发的OKLL俄歇电子和SiLVV俄歇电子的探测，证实了硅表面被氧化改性。这种氧化通过电场来增强。
It is demonstrated that nearly atomically flat Si(100) surfaces passivated with native oxides can be modified by applying a negative potential to the conducting probe of an atomic force microscope (AFM) with respect to the silicon substrate. It was verified from the detection of OKLL Auger electrons and SiLVV Auger electrons excited by the electron beam that silicon surfaces are modified by the oxidation of silicon. This oxidation is enhanced by an electric field.