Electric conductivity of boron nitride thin films enhanced by in situ doping of zinc
Electric conductivity of boron nitride thin films enhanced by in situ doping of zinc
复制标题
DOI：
10.1063/1.2354009
复制
发表时间：
2006-09-11
影响因子：
4
通讯作者：
Yoshida, T.
中科院分区：
文献类型：
--
作者：
Nose, K.;Oba, H.;Yoshida, T.
研究表明，原位掺杂锌可显著提高立方氮化硼和六方氮化硼薄膜的电导率。掺杂薄膜是半导电的，室温下的电导率随着锌浓度从400 ppm增加到20 000 ppm而从10（-8）Ω（-1）cm（-1）增加到10（-2）Ω（-1）cm（-1）。c-BN的导电激活能（E-c）随着锌浓度的增加从0.3 eV下降到0.1 eV，表明可以进行浅能级掺杂。另一方面，h-BN薄膜显示出约0.1 eV的E-c高于c-BN的，由于形成有缺陷的B-B键。(c)2006年，美国物理学会。
The authors demonstrate that the electric conductivities of cubic and hexagonal boron nitride (c-BN and h-BN) thin films increased markedly by the in situ doping of zinc. The doped films were electrically semiconducting, and conductivities at room temperature increased from 10(-8) to 10(-2) Omega(-1) cm(-1) with increasing zinc concentration from 400 to 20 000 ppm. Activation energies for electric conduction (E-c) of c-BN decreased from 0.3 to 0.1 eV with increasing zinc concentration, suggesting feasible shallow-level doping. On the other hand, h-BN thin films showed approximately 0.1 eV higher E-c than those of c-BN's, due to the formation of defective B-B bonds. (c) 2006 American Institute of Physics.