Wet Etching of β-Ga2O3 Substrates
Wet Etching of β-Ga2O3 Substrates
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DOI：
10.1143/jjap.48.040208
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发表时间：
2009-04-01
影响因子：
1.5
通讯作者：
Fujita, Shizuo
中科院分区：
文献类型：
--
作者：
Oshima, Takayoshi;Okuno, Takeya;Fujita, Shizuo
使用H3PO4和H2SO4对（100）取向的β-Ga2O3单晶衬底进行湿法蚀刻。蚀刻反应遵循阿克里尼乌斯方程，但在190摄氏度的高温下在H2SO4中的蚀刻受到表面上硫酸盐形成的干扰。考虑到在100 - 194 ℃的温度范围内的较高蚀刻速率，H3PO4更优选作为β-Ga2O3的蚀刻剂。虽然各向同性蚀刻导致侧面蚀刻，但成功地制造了微米量级的网格图案。这些结果表明，这种使用H3PO4的简单且低成本的湿法蚀刻适合于在β-Ga2O3衬底上隔离器件或图案化结构。(c)2009日本应用物理学会
Wet etching of (100)-oriented beta-Ga2O3 single crystal substrates was carried out using H3PO4 and H2SO4. The etching reactions followed the Arrhenius equation, but the etching in H2SO4 at a high temperature of 190 degrees C was disturbed by the formation of sulfates on the surface. Considering the higher etching rate over the temperature range of 100-194 degrees C, H3PO4 is more preferable as an etchant for beta-Ga2O3. Although the isotropic etching led to side etching, a grid pattern in the order of pm was successfully fabricated. These results indicate that this simple and low-cost wet etching using H3PO4 is suitable for isolating devices or patterning structures on beta-Ga2O3 substrates. (c) 2009 The Japan Society of Applied Physics