AlGaN/GaN HEMTs - An overview of device operation and applications
AlGaN/GaN HEMTs - An overview of device operation and applications
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DOI：
10.1109/jproc.2002.1021567
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发表时间：
2002-06-01
影响因子：
20.6
通讯作者：
Wu, YF
中科院分区：
文献类型：
--
作者：
Mishra, UK;Parikh, P;Wu, YF
宽禁带半导体对于从功率调节到用于通信和雷达的微波发射器的电力电子应用的范围具有极大的吸引力。在各种材料和器件技术中，AlGaN/GaN高电子迁移率晶体管似乎最有前途。本文试图介绍技术和市场的现状，突出的进展和存在的问题。
Wide bandgap, semiconductors are extremely attractive for the gamut of power electronics applications from power conditioning to microwave transmitters for communications and radar Of the various materials and device technologies, the AlGaN/GaN high-electron mobility transistor seems the most promising. This paper attempts to present the status of the technology and the market with a view of highlighting both the progress and the remaining problems.