Poly(3-hexylthiophene)/ZnO hybrid pn junctions for microelectronics applications
Poly(3-hexylthiophene)/ZnO hybrid pn junctions for microelectronics applications
复制标题
DOI：
10.1063/1.3114442
复制
发表时间：
2009-04
影响因子：
4
通讯作者：
E. Katsia;N. Huby;G. Tallarida;B. Kutrzeba-Kotowska;M. Perego;S. Ferrari;F. Krebs;E. Guziewicz;M. Godlewski;V. Osinniy;G. Luka
中科院分区：
文献类型：
--
作者：
E. Katsia;N. Huby;G. Tallarida;B. Kutrzeba-Kotowska;M. Perego;S. Ferrari;F. Krebs;E. Guziewicz;M. Godlewski;V. Osinniy;G. Luka
研究了聚（3-己基噻吩）/ZnO混合器件作为微电子学应用的整流异质结。在聚（3-己基噻吩）顶部低温原子层沉积ZnO允许制造具有在±4 V下接近105的整流比和104 A/cm 2的电流密度的二极管。考虑到堆栈的化学结构和能带图的电气特性进行了讨论。
Hybrid poly(3-hexylthiophene)/ZnO devices are investigated as rectifying heterojunctions for microelectronics applications. A low-temperature atomic layer deposition of ZnO on top of poly(3-hexylthiophene) allows the fabrication of diodes featuring a rectification ratio of nearly 105 at ±4 V and a current density of 104 A/cm2. Electrical characteristics are discussed taking into account the chemical structure of the stack and the energy band diagram.