EFFECTS OF SOME ADDITIVES ON THERMOELECTRIC PROPERTIES OF FESI2 THIN-FILMS

EFFECTS OF SOME ADDITIVES ON THERMOELECTRIC PROPERTIES OF FESI2 THIN-FILMS
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DOI：
10.1143/jjap.30.331
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发表时间：
1991-02-01
期刊：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
影响因子：
--
通讯作者：
IDO, S
IDO, S
中科院分区：
其他
文献类型：
--
作者：
KOMABAYASHI, M;HIJIKATA, K;IDO, S

文献摘要

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研究了几种添加剂(V、铬、锰、钴、镍、钯、铂)对FeSi2薄膜热电性能的影响。V、Cr、Mn掺杂的FeSi2薄膜为p型半导体，而Co、Ni、Pd、Pt掺杂的FeSi2薄膜为n型半导体。结果表明，在p型FeSi2的热电性能中，V或Cr的添加比在Mn中更合适，而在n型FeSi2的热电性能中，铂的添加优于其他添加剂。
Effects of some additives (V, Cr, Mn, Co, Ni, Pd, Pt) on thermoelectric properties of FeSi2 thin films were studied. V, Cr or Mn-doped FeSi2 films were of p-type semiconductor and Co, Ni, Pd and Pt-doped FeSi2 films of n-type semiconductor. It was indicated that V or Cr are more suitable additives in thermoelectric properties of p-type FeSi2 than Mn and that Pt is superior to other additives in thermoelectric properties of n-type FeSi2.