Resonant Raman scattering of a single layer of Si nanocrystals on a silicon substrate
Resonant Raman scattering of a single layer of Si nanocrystals on a silicon substrate
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硅基底上单层硅纳米晶体的共振拉曼散射
DOI：
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发表时间：
2004
期刊：
影响因子：
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通讯作者：
C. Bonafos
中科院分区：
文献类型：
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作者：
A. Wellner;V. Paillard;H. Coffin;N. Cherkashin;C. Bonafos
我们报告的拉曼光谱的单层硅纳米粒子，空间有序的二氧化硅在隧道距离从硅基板。这是通过利用增强的MEMS信号，同时抑制基板的效果。该方法被应用于研究离子注入产生的硅纳米粒子在不同条件下退火的结构。结果与透射电子显微镜数据非常一致，用于解释光致发光测量。
We report Raman spectra of a single layer of silicon nanoparticles, spatially ordered in SiO2 at a tunneling distance from a silicon substrate. This is achieved by exploiting effects which enhance the nanocrystal signal, while suppressing the substrate one. The method is applied to investigate the structure of ion-implantation-produced Si nanoparticles annealed under different conditions. The results, which are in good agreement with transmission electron microscopy data, are used to explain photoluminescence measurements.