Piezoelectric effect in (001)‐ and (111)‐oriented double‐barrier resonant tunneling devices
Piezoelectric effect in (001)‐ and (111)‐oriented double‐barrier resonant tunneling devices
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DOI：
10.1063/1.362382
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发表时间：
1996-05
影响因子：
3.2
通讯作者：
L. Cong;J. Albrecht;M. Nathan;P. Ruden
中科院分区：
文献类型：
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作者：
L. Cong;J. Albrecht;M. Nathan;P. Ruden
我们的实验表明，双势垒共振隧穿器件（DBRTD）的电流-电压特性可以修改由于外部单轴应力引起的压电效应的内部极化场。在平行于（110）或（110）晶体取向的单轴压缩应力下，在（001）取向的衬底上生长的DBRTD中，以及在平行于（111）晶体取向的应力下，在（111）B取向的衬底上生长的DBRTD中，产生垂直于界面的电极化场。共振隧穿电流峰值出现的电压（峰值电压）对外部应力引起的极化场敏感。峰值电压可以根据所施加应力的方向而向更正的电压或更负的电压偏移。我们在77 K下测量了AlAs/GaAs/AlAs双势垒共振隧穿结构的电流-电压特性作为外部应力的函数。单轴应力平行于（110.
We show experimentally that current–voltage characteristics of double‐barrier resonant tunneling devices (DBRTDs) can be modified by internal polarization fields due to the piezoelectric effect induced by external uniaxial stresses. Electric polarization fields, perpendicular to the interfaces, arise in DBRTDs grown on (001)‐oriented substrates under uniaxial, compressive stresses parallel to the (110) or (110) crystal orientations, and in DBRTDs grown on (111)B‐oriented substrates under stress parallel to (111) crystal orientation. The voltages at which the resonant tunneling current peaks occur (peak voltages) are sensitive to the polarization fields induced by external stresses. The peak voltages can shift to more positive voltages or more negative voltages depending on the directions of applied stresses. We measured current–voltage characteristics of AlAs/GaAs/AlAs double‐barrier resonant tunneling structures as a function of external stresses at 77 K. Uniaxial stress was applied parallel to the (110...