Evaporation–glow discharge hybrid source for plasma immersion ion implantation
Evaporation–glow discharge hybrid source for plasma immersion ion implantation
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DOI：
10.1016/j.surfcoat.2004.04.025
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发表时间：
2004-08
影响因子：
5.4
通讯作者：
Liuhe Li;R. Fu;R. Poon;S.C.H. Kwok;P. Chu;Y. Q. Wu;Y. H. Zhang;Xun Cai;Qiulong Chen;Ming Xu
中科院分区：
文献类型：
--
作者：
Liuhe Li;R. Fu;R. Poon;S.C.H. Kwok;P. Chu;Y. Q. Wu;Y. H. Zhang;Xun Cai;Qiulong Chen;Ming Xu
在等离子体浸没离子注入（PIII）工艺中，等离子体离子源起着非常重要的作用。在本文中，我们报告了我们新设计的蒸发-辉光放电混合离子源的PIII。高负衬底偏压不仅作为等离子体产生器，而且提供注入电压。硫蒸气气体辉光放电表明，等离子体中的电子被聚焦到入口管的孔口，从而有助于逃逸的蒸气气体的电离。硫的深度分布证实，这种蒸发辉光放电混合源是有效的材料具有低熔点和高蒸气压。
The plasma ion sources play a very important role in the plasma immersion ion implantation (PIII) process. In this paper, we report on our newly designed evaporation–glow discharge hybrid ion source for PIII. The high negative substrate bias not only acts as the plasma producer but also provides the implantation voltage. The sulfur vapor gas glow discharge shows that the electrons in the plasma are focused to the orifice of the inlet tube, thereby helping the ionization of the fleeing vapor gases. The sulfur depth profile confirms that this evaporation–glow discharge hybrid source is effective for materials with a low melting point and high vapor pressure.