Low-Temperature Wafer Bonding Based on Gold-Induced Crystallization of Amorphous Silicon
Low-Temperature Wafer Bonding Based on Gold-Induced Crystallization of Amorphous Silicon
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DOI：
10.1109/led.2010.2055532
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发表时间：
2010-09-01
影响因子：
4.9
通讯作者：
Wang, Yuelin
中科院分区：
文献类型：
--
作者：
Jing, Errong;Xiong, Bin;Wang, Yuelin
Low-temperature wafer bonding based on gold-induced crystallization of amorphous silicon has been investigated for the first time in this letter. A bonding yield of 97% and a shear strength of 10.5 MPa were achieved when bonding the oxide wafers by the bonding method at 400 degrees C applying 0.8-MPa pressure for 30 min. The microstructure analysis indicated that the gold-induced crystallization process leads to big Si grains extending across the bonding interface and Au filling the other regions of the bonding interface, which result to a strong and void-free bonding interface. More importantly, this bonding method can be used for other substrate materials.
