Growth and characterization of low composition Ge, x in epi-Si1−xGex (x ⩽ 10%) active layer for fabrication of hydrogenated bottom solar cell
Growth and characterization of low composition Ge, x in epi-Si1−xGex (x ⩽ 10%) active layer for fabrication of hydrogenated bottom solar cell
复制标题
用于制造氢化底部太阳能电池的 epi-Si1−xGex (x ⩽ 10%) 活性层中低成分 Ge, x 的生长和表征
DOI：
10.1088/1361-6463/aab80d
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Y. Ishikawa
中科院分区：
文献类型：
--
作者：
M. Ajmal Khan;R. Sato;K. Sawano;P. Sichanugrist;A. Lukianov;Y. Ishikawa
半导体epi-Si1−xGex合金作为太阳能电池材料具有很好的特性，对于其他一些半导体器件应用可能同样重要。改变epi-Si1−xGex中的锗成分x，可以将带隙控制在1.12 eV和0.68 eV之间，用于底部太阳能电池。在SiGe合金中低比例的Ge可用于光伏底部电池，以完成具有宽带隙材料的四端串联结构。在这项研究中，我们的目标是使用低比例的锗（约10%-in）应变或松弛的c-Si1−xGex/c-Si异质结（HETs），有或没有插入通过分子束外延生长的Si缓冲层，来研究松弛或应变的SiGe活性层对使用等离子体增强化学气相沉积系统生长的HET太阳能电池性能的影响。由于异质界面处的c-Si缓冲层，这些SiGe基HET太阳能电池的效率从2.3%提高到3.5%（完全应变和有缓冲层）。晶体质量的提高使Jsc从8 mA cm−2提高到15.46 mA cm−2，这可能是由于在异质界面处有应变的c-Si缓冲层的支持。
Semiconducting epi-Si1−xGex alloys have promising features as solar cell materials and may be equally important for some other semiconductor device applications. Variation of the germanium compositional, x in epi-Si1−xGex, makes it possible to control the bandgap between 1.12 eV and 0.68 eV for application in bottom solar cells. A low proportion of Ge in SiGe alloy can be used for photovoltaic application in a bottom cell to complete the four-terminal tandem structure with wide bandgap materials. In this research, we aimed to use a low proportion of Ge—about 10%—in strained or relaxed c-Si1−xGex/c-Si heterojunctions (HETs), with or without insertion of a Si buffer layer grown by molecular beam epitaxy, to investigate the influence of the relaxed or strained SiGe active layer on the performance of HET solar cells grown using the plasma enhanced chemical vapor deposition system. Thanks to the c-Si buffer layer at the hetero-interface, the efficiency of these SiGe based HET solar cells was improved from 2.3% to 3.5% (fully strained and with buffer layer). The Jsc was improved, from 8 mA cm−2 to 15.46 mA cm−2, which might be supported by strained c-Si buffer layer at the hetero-interface, by improving the crystalline quality.
影响因子：
56.7
作者：
Yoshikawa, Kunta;Kawasaki, Hayato;Yamamoto, Kenji
通讯作者：
Yamamoto, Kenji